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Welcome to ISEG-2017

2017.11.25
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2017.11.14
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2017.9.15
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2017.8.9
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2017.7.20
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2017.4.4
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2017.2.7
Tentative Program updated.

2016.8.3
Invited Speakers List updated.

2016.6.3
ISEG website opened.
The International Symposium on Epitaxial Graphene (ISEG-2017) will be held at Nagoya University, Japan on 22-25 November 2017. The ISEG-2017 welcomes scientists and engineers who are interested in epitaxial graphene on silicon carbide and related materials.

Since the Nobel prize in 2010, graphene research has been extensively spread. Among them, epitaxial graphene on SiC is one of the best candidate for semiconducting applications because graphene growth on SiC is the only technique to obtain wafer-scale single-crystalline graphene directly on the insulating substrate.

Based on the history of epitaxial graphene on SiC, which is shown below, this symposium will focus on:
-Basics and applications of epitaxial graphene on SiC.
-Epitaxial growth of the low-dimensional material on SiC or on graphene/SiC.
-Science and technology about the modification of SiC surface.
Other related topics are also welcome.

We would like to discuss the FUTURE of epitaxial graphene.

We look forward to seeing you in Nagoya!

Wataru Norimatsu and Michiko Kusunoki (Co-chairs)

Contact address: w_norimatsu*imass.nagoya-u.ac.jp
(Change * to @)
History of Epitaxial Graphene
1896 Graphitization phenomenon of SiC appeared in a patent by E. G. Acheson. This is the first document of this phenomenon. (It is the year when Roentgen discovered x-ray.)
1965 A paper by D. V. Badami was published, in which the x-ray diffraction study of graphite grown by thermal decomposition of SiC was reported. The orientation relation between graphite and the hexagonal SiC (0001) was clarified.
1975 A. J. van Bommel et. al. published a paper about the low-energy electron diffraction (LEED) study of graphite on SiC. The 6√3x6√3R30 reconstructed surface was firstly reported.
1998 Growth process and the conduction band electronic structure of graphene ("graphite monolayer") were revealed in a paper by I. Forbeaux and coworkers.
2000 "Very thin layer of graphite" on SiC was directly visualized by high-resolution transmission electron microscopy (HRTEM) in a paper by M. Kusunoki et al.
2004 Two-dimensional electron gas properties of "ultrathin epitaxial graphite" were reported by C. Berger et al. This paper is the pioneering work of epitaxial graphene research and it triggered explosive expansion of this field.
2006 The electronic structure of graphene on SiC was revealed by angle-resolved photoemission spectroscopy (ARPES) which was performed by T. Ohta et al.
2008 H. Hibino, et al. succeeded in direct counting the number of graphene layers by low-energy electron microscopy (LEEM), which is the non-destructive experiment. 
2008 Homogeneous large-area graphene growth technique was developed by two groups, one is C. Virojanadara, et al. and the other is K. V. Emtsev, et al. Growth in an Ar atmosphere leads to homogeneous graphene.
2009 Hydrogen intercalation was performed in order to obtain quasi-freestanding monolayer graphene by C. Riedl and coworkers. The 6√3x6√3R30 buffer layer was converted to monolayer graphene by hydrogen intercalation.
2010 A. Tzalenchuk et al reported a quantum resistance standard based on epitaxial graphene, which is one of the best graphene applications.
2010 Growth mechanism and the interface structure of graphene on SiC was revealed by the HRTEM observation by W. Norimatsu et al.
2010 Y. Qi et al. revealed the atomic structure of the interface buffer layer by scanning tunneling spectroscopy (STM). 
2010 Y-M. Lin et al. succeeded in fabrication of 100 GHz transistors. 300 GHz was achieved later by the same group.
2011 Y-M Lin et al. also demonstrated operation of wafer-scale graphene integrated circuit. 
2011 Graphene growth on SiC by chemical vapor deposition was reported by W. Strupinski et al. 
2012 J. Ristein et al. explained the origin of n-type conduction in epitaxial graphene on SiC and p-type conduction in quasi-freestanding monolayer graphene on SiC.
2013 Repeatable graphene transfer was established by J. Kim et al. 
2014 Ballistic transport in epitaxial graphene nanoribbons was reported by J. Baringhaus et al. 
2014 Y-C Lin et al. succeeded in growth of transition metal dichalcogenides on epitaxial graphene on SiC. 
2015 Indication of superconductivity in epitaxial graphene was obtained by B. M. Ludbrook et al. 
2016 Z. Y. Al Balushi et al. reported the growth of two-dimensional gallium nitride between graphene and SiC.
And ... ...Where are we going?

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