TOPへ戻る
業績一覧へ戻る




原著論文
2018--2017--2016--2015--2014--2013--2012--2011--2010--2009--2008 --2007--2006--2005--2004--2003--2002 --2001--2000--1999〜
2019
"Plasmonic Trapping-Induced Crystallization of Acetaminophen",
Hiromasa Niinomi, Teruki Sugiyama , Satoshi Uda, Miho Tagawa, Toru Ujihara, Katsuhiko Miyamoto,Takashige Omatsu,
Cryst. Growth Des., 19, (2019), pp 529-537.
DOI:10.1021/acs.cgd.8b01361

"Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process",
Takashi Horiuchi, Lei Wang, Atsushi Sekimoto, Yasunori Okano, Toru Ujihara, Sadik Dost,
J. Cryst. Growth, 517, 1 July(2019), pp 59-63.
DOI:10.1016/j.jcrysgro.2019.04.001

"機械学習を用いた結晶成長予測モデルの構築とその応用",
宇治原 徹, 角岡 洋介, 畑佐 豪記, 沓掛 健太朗, 石黒 祥生, 村山 健太, 鳴海 大翔, 原田 俊太, 田川 美穂,
表面と真空, 62巻3号, (2019), pp 136-140.
DOI:10.1380/vss.62.136

"結晶成長学的見地による金属負極の析出形態と結晶方位の相関解明",
石川 晃平, 三橋 貴仁, 伊藤 靖仁, 竹内 幸久, 原田 俊太, 田川 美穂, 宇治原 徹,
日本結晶成長学会誌, 46巻1号, (2019), pp 136-140.
DOI:10.19009/jjacg.46-1-08

"少量添加で樹脂素材の熱伝導率を向上させるAlNウィスカーフィラーの開発",
宇治原 徹,
エレクトロニクス実装学会誌, 22巻3号, (2019), pp 195-198.
DOI:10.5104/jiep.22.195

topへ戻る

2018
"Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC",
Lei Wang, Takashi Horiuchi, Atsushi Sekimoto, Yasunori Okano, Toru Ujihara, Sadik Dost,
J. Cryst. Growth, 498, (2018), pp.140-147.
DOI:10.1016/j.jcrysgro.2018.06.017

"In Situ Observation of Chiral Symmetry Breaking in NaClO3 Chiral Crystallization Realized by Thermoplasmonic Micro-Stirring",
Hiromasa Niinomi, Teruki Sugiyama, Miho Tagawa, Shunta Harada, Toru Ujihara, Satoshi Uda, Katsuhiko Miyamoto, Takashige Omatsu,
Cryst. Growth Des, 18, (2018), pp.4230-4239.
DOI:10.1021/acs.cgd.8b00420

"Development of angle-resolved spectroscopy system of electrons emitted from a surface with negative electron affinity state",
Fumiaki Ichihashi, Xinyu Dong, Akito Inoue, Takahiko Kawaguchi, Makoto Kuwahara, Takahiro Ito, Shunta Harada, Miho Tagawa, Toru Ujihara,
REVIEW OF SCIENTIFIC INSTRUMENTS, 89, (2018), 073103.
DOI:10.1063/1.5021116

"Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping",
N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M.Shimizu, S. Harada, M. Tagawa, T. Ujihara,
Appl. Phys. Express, 11, (2018), 111001.
http://iopscience.iop.org/article/10.7567/APEX.11.111001

"Improvement mechanism of sputtered AlN films by high-temperature annealing",
S. Xiao, R. Suzuki, H. Miyake, S. Harada, T. Ujihara,
J. Cryst. Growth, 502, (2018), pp.41-44.
https://doi.org/10.1016/j.jcrysgro.2018.09.002

"High-speed prediction of computational fluid dynamics simulation in crystal growth",
Y. Tsunooka, N. Kokubo, G. Hatasa, S. Harada, M. Tagawa, T. Ujihara,
CrystEngComm, 20, (2018), pp.6546-6550.
https://doi.org/10.1039/C8CE00977E

"Importance of Hydration State around Proteins Required to Grow High-Quality Protein Crystals",
H. Koizumi, S. Uda, K. Tsukamoto, K. Kojima, M. Tachibana, T. Ujihara,
Cryst. Growth Des., 18, (2018), 4749-4755.
DOI: 10.1021/acs.cgd.8b00798

"Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation",
F. Fujie, S. Harada, H. Koizumi, K. Murayama, K. Hanada, M. Tagawa, T. Ujihara,
Appl. Phys. Lett, 113, (2018), 012101.
https://doi.org/10.1063/1.5038189

"Detection of edge component of threading dislocations in GaN by Raman spectroscopy",
N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, K. Hara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa, T. Ujihara,
Appl. Phys. Express, 11, (2018), 061002.
https://doi.org/10.7567/APEX.11.061002

"Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method",
K. Murayama, S. Harada, F. Fujie, X. Liu, R. Murai, C. Zhu, K. Hanada, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 924, (2018), pp.60-63.
https://doi.org/10.4028/www.scientific.net/MSF.924.60

"Dislocation Behavior in Bulk Crystals Grown by TSSG Method",
K. Seki, K. Kusunoki, Y. Kishida, H. Kaido, K. Moriguchi, M. Kado, H. Daikoku, T. Shirai, M. Akita, A. Seki, H. Saito, S. Harada, T. Ujihara,
Mater. Sci. Forum, 924, (2018), pp.39-42.
https://doi.org/10.4028/www.scientific.net/MSF.924.39

topへ戻る

2017
"Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photo emission measurements",
F. Ichihashi, T. Kawaguchi, X. Dong, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara,
AIP Advances, 7 (11), (2017), 115314.

"Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method",
T. Yamamoto, N. Adkar, Y. Okano, T. Ujihara, S. Dost,
J. Cryst. Growth, 474, (2017), pp.50-54.
http://dx.doi.org/10.1016/j.jcrysgro.2016.12.086

"Solvent design for high-purity SiC solution growth",
S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 897, (2017), pp.32-35.
DOI: 10.4028/www.scientific.net/MSF.897.32

"Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth",
T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 897, (2017), pp.28-31.
DOI: 10.4028/www.scientific.net/MSF.897.28

"SiC solution growth on Si face with extremely low density of threading screw dislocations for suppression of polytype transformation",
K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 897, (2017), pp.24-27.
DOI:10.4028/www.scientific.net/MSF.897.24

"Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation",
T. Yamamoto, Y. Okano, T. Ujihara, S. Dost,
J. Cryst. Growth, 470, (2017), pp.75-88.
https://doi.org/10.1016/j.jcrysgro.2017.04.016

"Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor",
M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara,
J. Cryst. Growth, 468, (2017), pp.576-580.
DOI: 10.1016/j.jcrysgro.2016.11.127

"Two-step SiC solution growth for dislocation reduction",
K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara,
J. Cryst. Growth, 468, (2017), pp.874-878.
http://dx.doi.org/10.1016/j.jcrysgro.2016.11.100

"Phase transition process in DDAB supported lipid bilayer",
T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa,
J. Cryst. Growth, 468, (2017), pp.88-92.
http://dx.doi.org/10.1016/j.jcrysgro.2016.09.063

"Crystal Orientation Dependence of Precipitate Structure of Electrodeposited Li Metal on Cu Current Collectors",
K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara,
Cryst. Growth Des., 17 (5), (2017), pp.2379-2385.
DOI: 10.1021/acs.cgd.6b01710

"Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents",
N. Komatsu, T. Mitani, Y. Hayashi, T. Kato, S. Harada, T. Ujihara, H. Okumura,
J. Cryst. Growth, 458, (2017), pp.37-43.
http://dx.doi.org/10.1016/j.jcrysgro.2016.10.045

topへ戻る

2016
"Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaClO3 Unsaturated Mother Solution",
H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Ujihara, T. Omatsu, Y. Mori,
Cryst. Growth Des, 13 December, (2016).
doi:10.1021/acs.cgd.6b01657

"Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC",
T. Umezaki, D. Koike, S. Harada, T. Ujihara,
Japanese Journal of Applied Physics, 55, (2016), 125601.

"Septin Interferes with the Temperature-Dependent Domain Formation and Disappearance of Lipid Bilayer",
S. Yamada, T. Isogai, R. Tero, Y. Tanaka-Takiguchi, T. Ujihara, M. Kinoshita, K. Takiguchi,
Langmuir, (2016), pp.12823-12832.
DOI: 10.1021/acs.langmuir.6b03452

"Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth",
S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara,
Cryst. Growth Des, 16, (2016), pp.6436-6439.
DOI: 10.1021/acs.cgd.6b01107

"Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles",
H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara,
CrystEngComm, 18, (2016), pp.7441-7448.
DOI: 10.1039/C6CE01464J

"Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis",
S. Xiao, S. Harada, K. Murayama, T. Ujihara,
Cryst. Growth Des, 16, (2016), pp.5136-5140.
DOI: 10.1021/acs.cgd.6b00711

"The Boersch effect in a picosecond pulsed electron beam emitted from a semiconductor photocathode",
M. Kuwahara, Y. Nambo, K. Aoki, K. Sameshima, X. Jin, T. Ujihara, H. Asano, K. Saitoh, Y. Takeda, N. Tanaka,
Appl. Phys. Lett, 109, (2016), 013108.
DOI: 10.1063/www.dx.doi.org/1.4955457

"High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent",
S. Watanabe, M. Nagaya, Y. Takeuchi, K. Aoyagi, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 858, (2016), pp.1210-1213.
DOI: MSF.858.1210

"Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method",
Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara,
Mater. Sci. Forum, 858, (2016), pp.57-60.
DOI: MSF.858.57

"Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents",
A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara,
Jpn. J. Appl. Phys., 55, (2016), 01AC01.
http://doi.org/10.7567/JJAP.55.01AC01

"Effect of magnesium ion concentration on two-dimensional structure of DNA-functionalized nanoparticles on supported lipid bilayer",
T. Isogai, E. Akada, S. Nakada, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa,
Jpn. J. Appl. Phys., 55, (2016), 03DF11.
http://doi.org/10.7567/JJAP.55.03DF11

topへ戻る

2015
"3C-SiC Crystal on Sapphire by Solution Growth Method",
K. Shibata, S. Harada, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 185-188.
doi:10.4028/www.scientific.net/MSF.821-823.185

"Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth",
S. Xiao, N. Hara, S. Harada, K. Murayama, K. Aoyagi, T. Sakai, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 39-42.
doi:10.4028/www.scientific.net/MSF.821-823.39

"Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC",
K. Fujii, K. Takei, M. Aoshima, N. Senguttuvan, M. Hiratani, T. Ujihara, Y. Matsumoto, T. Kato, K. Kurashige, H. Okumura,
Mater. Sci. Forum, 821-823, (2015), pp. 35-38.
doi:10.4028/www.scientific.net/MSF.821-823.35

"Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds",
T. Umezaki, D. Koike, S. Harada, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 31-34.
doi:10.4028/www.scientific.net/MSF.821-823.31

"Effect of forced convection by crucible design in solution growth of SiC single crystal",
K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura,
Mater. Sci. Forum, 821-823, (2015), pp. 22-25.
doi:10.4028/www.scientific.net/MSF.821-823.22

"Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal",
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 18-21.
doi:10.4028/www.scientific.net/MSF.821-823.18

"Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent",
N. Komatsu, T. Mitani, T. Takahashi, T. Kato, K. Kurashige, Y. Matsumoto, T. Ujihara, H. Okumura,
Mater. Sci. Forum, 821-823, (2015), pp.14-17.
doi:10.4028/www.scientific.net/MSF.821-823.14

"4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions",
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura,
Mater. Sci. Forum, 821-823, (2015), pp.9-13.
doi:10.4028/www.scientific.net/MSF.821-823.9

"Dislocation Conversion during SiC Solution Growth for High-quality Crystals",
S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 3-8.
doi:10.4028/www.scientific.net/MSF.821-823.3

"Non-uniform electrodeposition of zinc on the (0001) plane",
T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara,
Thin Solid Films, 590, (2015), pp.207-213.
doi:10.1016/j.tsf.2015.07.068

"Effect of aluminum addition on the surface step morphology of 4HSiC grown from Si-Cr-C solution",
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura,
J. Cryst. Growth, 423, 1 August, (2015), pp.45-49.
doi:10.1016/j.jcrysgro.2015.04.032

“バルク結晶成長のこの10年”,
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志,
日本結晶成長学会誌, 42, (2015), pp.64-68.

topへ戻る

2014
"Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope",
M. Kuwahara, S. Kusunoki, Y. Nambo, K. Saitoh, X. Jin, T. Ujihara, H. Asano, Y. Takeda, N. Tanaka,
Appl. Phys. Lett. 105, (2014), 193101.
http://dx.doi.org/10.1063/1.4901745

"Different behavior of threading edge dislocation conversion during the solution growth of 4H-SiC depending on the Burgers vector",
S. Harada, Y. Yamamoto, K. Seki, A. Horio, M. Tagawa, T. Ujihara,
Acta Materialia, 81, (2014), pp. 284-290.
DOI: 10.1016/j.actamat.2014.08.027

"Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions",
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, K. Fujii, T. Ujihara, Y. Matsumoto, K. Kurashige, H.Okumura,
Journal of Crystal Growth, 401, (2014), pp. 681-685.

"Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique",
K. Kusunoki, N. Okada, K. Kamei, K. Moriguchi, H. Daikoku, M. Kado, H. Sakamoto, T. Bessho, T. Ujihara,
Journal of Crystal Growth, 395, 1 June (2014), pp. 68-73.

"The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy",
T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda and H. Ikuta,
Superconductor Science and Technology, 27, (2014), 065005 (6pp).
DOI: 10.1088/0953-2048/27/6/065005

"Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method",
Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, D. Koike, M. Tagawa, and T. Ujihara,
Applied Physics Express, 7, (2014), 065501.
DOI: 10.7567/APEX.7.065501

"Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth",
H. Niinomi, H. Miura, Y. Kimura, M. Uwaha, H. Katsuno, S. Harada, T. Ujihara and K. Tsukamoto,
Crystal Growth and Design, 14, 7, (2014), pp. 3596-3602.
DOI: 10.1021/cg500527t

"Growth of a smooth CaF2 layer on NdFeAsO thin film",
N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A.Ichinose, I. Tsukada and H. Ikuta,
Journal of Physics Conference Series, 507, (2014), 012047.

"Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers",
T. Isogai, A. Piednoir, E. Akada, Y. Akahoshi, R. Tero, S. Harada, T. Ujihara, M. Tagawa,
J. Cryst. Growth, 401, (2014), pp. 494-498.

"Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth",
H. Niinomi, A. Horio, S. Harada, T. Ujihara, H. Miura, Y. Kimura, K. Tsukamoto,
Journal of Crystal Growth, 394, 15 May (2014), pp.106-111.

"Nitrogen doping of 4H- SiC by the top-seeded solution growth technique using Si-Ti solvent",
K. Kusunoki, K. Kamei, K. Seki, S. Harada, T. Ujihara,
J. Cryst. Growth, 392, 15 April (2014), pp.60-65.

"Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents",
K. Kusunoki, K. Kamei, N. Okada, K. Moriguchi, H. Kaido, H. Daikoku, M. Kado, K. Danno, H. Sakamoto, T. Bessho, T. Ujihara,
Mater. Sci. Forum, 778-780, February (2014), pp.79-82.

"Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent",
S. Harada, Y. Yamamoto, S. Y. Xiao, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 778-780, February (2014), pp. 67-70.

"Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC",
T. Umezaki, D. Koike, A. Horio, S. Harada, T. Ujihara,
Mater. Sci. Forum, 778-780, February (2014), pp. 63-66.

●プロシーディングス
"Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy",
F. Ichihashi, D. Shimura, K. Nishitani, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T.Ujihara,
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th , 8-13 June (2014), pp.2882-2885.
DOI:10.1109/PVSC.2014.6925534

topへ戻る

2013
"Achiral Metastable Crystals of Sodium Chlorate Forming Prior to Chiral Crystals in Solution Growth",
H. Niinomi, T. Yamazaki, S. Harada, T. Ujihara, H. Miura, Y. Kimura, T. Kuribayashi, M. Uwaha, K. Tsukamoto,
Cryst. Growth Des., 13 (12), (2013), pp.5188-5192.

"Evolution of threading screw dislocation conversion during solution growth of 4H-SiC",
S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, and T. Ujihara,
APL Mater., 1(2), (2013), 022109 (7 pages).

"Influence of Solution Flow on Step Bunching in Solution Growth of SiC Crystals",
C. Zhu, S. Harada, K. Seki, H. Zhang, H. Niinomi, M. Tagawa, and T. Ujihara,
Cryst. Growth Des., 13 (8), (2013), June 13, pp. 3691-3696.

"Phase-locking of oscillating images using laser-induced spin-polarized pulse TEM",
M. Kuwahara, Y. Nambo, S. Kusunoki, X.G Jin, K. Saitoh, H. Asano, T. Ujihara, Y. Takeda, T. Nakanishi and N. Tanaka,
Microscopy, (2013), June 23, pp.1-8.

"Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method"
H. Matsubara, K. Mizuno, Y. Takeuchi, S. Harada, Y. Kitou, E. Okuno, and T. Ujihara
Jpn. J. Appl. Phys., 52, (2013), 08JE17 (4 pages).

"Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth",
Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara,
Mater. Sci. Forum, 740-742, (2013), pp.15-18.

"Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC",
S. Harada, Y. Yamamoto, K. Seki, T. Ujihara,
Mater. Sci. Forum, 740-742, (2013), pp. 189-192.

"Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method",
K. Seki, S. Harada, T. Ujihara,
Mater. Sci. Forum, 740-742, (2013), pp.311-314.

“超高品質SiC溶液成長”,
宇治原徹, 原田俊太, 山本祐治, 関和明,
応用物理, 82, (2013), pp. 326-329.

“SiC溶液成長の最近の展開”,
原田俊太, 山本祐治, 関和明, 宇治原徹,
日本結晶成長学会誌, 40, (2013), pp. 25-32.

“SiC 結晶成長における多形制御 〜速度論的多形制御法の提案（3C-SiC 溶液成長を例に）〜”,
関和明, 原田俊太, 宇治原徹,
日本結晶成長学会誌, 40, (2013), pp. 253-260.

●プロシーディングス
"Critical current density and grain boundary property of BaFe2(As,P)2 thin films",
A. Sakagami, T. Kawaguchi, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta,
Physica C: Superconductivity, 494, Proceedings of the 25th International Symposium on Superconductivity (ISS 2012) Advances in Superconductivity XXV, 15 November, (2013), pp.181-184.
doi:10.1016/j.physc.2013.04.047

topへ戻る

2012
"High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth",
Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara,
Appl. Phys. Express, 5, (2012), 115501 (3 pages).

"Development of Spin-Polarized and Pulsed TEM",
M. Kuwahara, F. Ichihashi, S. Kusunoki, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi, N. Tanaka,
J. Phys: Conf. Ser., 371 (2012), 012004.

"Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth",
Y. Yamamoto, K. Seki, S. Kozawa, Alexander, S. Harada, T. Ujihara,
Mater. Sci. Forum, 717-720, (2012), pp.53-56.

"Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth",
T. Ujihara, S. Kozawa, K. Seki, Alexander, Y. Yamamoto, S. Harada,
Mater. Sci. Forum, 717-720, (2012), pp.351-354.

"Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films",
H. Uemura, T. Kawaguchi, T. Ohno, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta,
Solid State Communications, 152, 8, (2012), pp.735-739.

"Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth",
S. Harada, Alexander, K. Seki, Y. Yamamoto, C. Zhu, Y. Yamamoto, S. Arai, J. Yamasaki, N. Tanaka, and T. Ujihara,
Crystal Growth & Design, 12, (6), (2012), pp.3209-3214.

"Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation",
X.G. Jin, H. Nakahara, K. Saitoh, T. Saka, T. Ujihara, N. Tanaka, Y. Takeda ,
J. Cryst. Growth, 353, 1, (2012), pp.84-87.

"30-kV spin-polarized transmission electron microscope with GaAs-GaAsP strained superlattice photocathode",
M. Kuwahara, S. Kusunoki, X. G. Jin, T. Nakanishi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, and N. Tanaka,
Appl. Phys. Lett. 101, (2012), 033102.

"Polytype-selective growth of SiC by supersaturation control in solution growth Original Research Article",
K. Seki, Alexander, S. Kozawa, S. Harada, T. Ujihara, Y. Takeda,
J. Cryst. Growth, 360, (2012), pp.176-180.

topへ戻る

2011
"Epitaxial growth of LaFeAs(O,F) thin films by molecular beam epitaxy",
T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, H. Ikuta,
Physica C: Superconductivity, 471, 21-22, (2011), pp. 1174-1176.

"High-quality and large-area 3C-SiC growth on 6H-SiC(0 0 0 1) seed crystal with top-seeded solution method.",
T. Ujihara, K. Seki, R. Tanaka, S. Kozawa, Alexander, K. Morimoto, K. Sasaki, Y. Takeda,
J. Cryst. Growth, 318, (2011), pp. 389-393.

"Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness.",
K. Tani, S. Fuchi, R. Mizutani, T. Ujihara, Y. Takeda,
J. Cryst. Growth, 318, (2011), pp. 1113-1116.

"Defect evaluation of SiC crystal grown by solution method: the study by synchrotron X-ray topography and etching method",
S. Kozawa, K. Seki, Alexander, Y. Yamamoto, T. Ujihara and Y. Takeda,
Mater. Sci. Forum, 679-680, (2011), pp. 28-31.

"Polytype stability of 4H-SiC seed crystal on solution growth",
Alexander, K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara and Y. Takeda,
Mater. Sci. Forum, 679-680, (2011), pp. 24-27.

"Development of spin-polarized transmission electron microscope",
M. Kuwahara, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi and N Tanaka,
J. Phys.:Conf. Ser. 298, (2011), 012016.

"Status of the high brightness polarized electron source using transmission photocathode",
N. Yamamoto, X.G.Jin, A. Mano, T. Ujihara, Y. Takeda, S. Okumi, T. Nakanishi, T. Yasue, T. Koshikawa, T.Oshima, T. Saka and H. Horinaka,
J. Phys.:Conf. Ser. 298, (2011), 012017.

"Anomalous Diffusion in Supported Lipid Bilayers Induced by Oxide Surface Nanostructures",
R. Tero, G. Sazaki, T. Ujihara, and T. Urisu,
Langmuir, 27, (2011), pp. 9662-9665.

"Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method",
T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, Y. Takeda and H. Ikuta,
Appl. Phys. Express, 4, (2011), 083102 (3 pages).

"Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si Sc C system",
K. Seki, Alexander, S. Kozawa, T. Ujihara, P. Chaudouet, D. Chaussende, Y. Takeda,
J. Cryst. Growth, 335, 1, (2011), pp. 94-99.

topへ戻る

2010
"Stacking Faults around the hetero-interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth",
K. Seki, K. Morimoto, T. Ujihara, T. Tokunaga, K. Sasaki, K. Kuroda, and Y. Takeda,
Mater. Sci. Forum, 645-648, (2010), pp. 363-366.

"Real time magnetic imaging by spin-polarized low energy electron microscopy with highly spin-polarized and high brightness electron gun",
M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa, Y. Nakagawa, T. Konomi, A. Mano, N. Yamamoto, M. Kuwahara, M. Yamamoto, S. Okumi, T. Nakanishi, X.G. Jin, T. Ujihara, Y. Takeda, T. Kohashi, T. Ohshima, T. Saka, T. Kato, and H. Horinaka,
Appl. Phys. Express, 3, (2010), #026601.

"Strain of GaAs/GaAsP superlattices used as spin-polarized electron photocathodes, determined by X-ray diffraction",
T. Saka, Y. Ishida, M. Kanda, X.G. Jin, Y. Maeda, S. Fuchi, T. Ujihara, Y. Takeda, T. Matsuyama, H. Horinaka, T. Kato, N. Yamamoto, A. Mano, Y. Nakagawa, M. Kuwahara, S. Okumi, T. Nakanishi, M. Yamamoto, T. Ohshima, T. Kohashi, M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa,
e-Journal of Surface Science and Nanotechnology, 8, (2010), pp. 125-130.

"TEM analysis of SiC crystal grown on (001) 3C-SiC CVD substrate by solution growth",
K. Morimoto, R.Tanaka, K. Seki, T. Tokunaga, T. Ujihara, K. Sasaki, Y. Takeda, K. Kuroda,
International Journal of Advanced Microscopy and Theoretical Calculations, Letters 2, (2010), pp. 242-243.

"Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices.",
X.G. Jin, Y. Maeda, T. Sasaki, S. Arai, Y. Ishida, M. Kanda, S. Fuchi, T. Ujihara, T. Saka, and Y. Takeda,
J. Appl. Phys., 108, 9, (2010), pp.094509-094509-6, #094509.

"In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy",
T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta,
Appl. Phys. Lett. 97, (4), (2010), 042509.

topへ戻る

2009
"Low temperature solution growth of 3C-SiC crystals in Si-Ge-Ti solvent",
R. Tanaka, K. Seki, S. Komiyama, T. Ujihara, Y. Takeda,
Mater. Sci. Forum, 600-603, (2009), pp. 59-62.

"Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method",
K. Seki, R. Tanaka, T. Ujihara, Y. Takeda,
Mater. Sci. Forum, 615-617, (2009), pp. 27-30.

"Stability Growth Condition for 3C-SiC Crystals by Solution Technique",
T. Ujiahra, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, Y. Takeda,
Mater. Sci. Forum, 600-603, (2009), pp. 63-66.

"High Temperature Solution Growth on Free-standing (001)3C-SiC Epilayers",
R. Tanaka, K. Seki, T. Ujihara, Y. Takeda,
Mater. Sci. Forum, 615-617, (2009), pp. 37-40.

" Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy",
T. Kawaguchi, H. Uemura, T. Ohno, R. Watanabe, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta,
Applied Physics Express, 2, (2009), 093002.

"Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates",
T. Saka, T. Kato, X.G. Jin, M. Tanioku, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Matsuyama, T. Yasue, and T. Koshikawa,
Phys. Status Solidi, 8, (2009), 1785.

"Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy",
M. Takihara, T. Takahashi, T. Ujihara,
Appl. Phys. Lett., 95: 19, (2009), #191908.

“ＳｉＣ単結晶の溶液成長”,
宇治原徹,
Materials Stage, 9, (2009), pp. 46-49.

“次世代のＳｉＣ高品質基板結晶作製技術　溶液法によりマイクロパイプ・基底面転位を低減　産学の連携を深め、実用化をめざす”,
宇治原徹, 竹田美和,
Semiconductor FPD World, 11, (2009), pp. 55-58.

●プロシーディングス
"Local Condensation of Artificial Raft Domains under Light　Irradiation in Supported Lipid Bilayer of PSM-DOPC-Cholesterol　System",
T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero and Y. Takeda,
Trans. Mater. Res. Soc. Jpn., 34 (2), (2009), pp. 179-182.

"Effects of Applied Voltage on the Size of Phase-Separated Domains in DMPS-DOPC Lipid Binary Bilayers Supported on SiO2/Si Substrates",
Y. Yamauchi, T. Ujihara, R. Tero and Y. Takeda,
Trans. Mater. Res. Soc. Jpn., 34 (2), (2009),pp. 217-220.

"Shape transformation of adsorbed vesicles on oxide surfaces: Effect of substrate material and photo-irradiation",
R. Tero, T. Ujihara and T. Urisu,
Trans. Mater. Res. Soc. Jpn., 34 (2), (2009), pp. 183-188.

"Status of 200keV Beam Operations at Nagoya University",
M. Yamamoto, T. Konomi, S. Okumi, Y. Nakagawa, N. Yamamoto, M.Tanioku, X. Jin, T. Ujihara, Y. Takeda, F. Fukuta, H. Matsumoto, M. Yoshioka, M. Kuriki, C. Shonaka, T. Nakanishi,
AIP Proceedings, 1149, (2009), 987.

"High Brightness and High Polarization Electron Source Using Transmission Photocathode",
N. Yamamoto, X. Jin, A. Mano, Y. Nakagawa, T. Nakanishi, T. Ujihara, S. Okumi, M. Yamamoto, T. Konomi, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa,
AIP Proceedings, 1149, (2009), pp. 1052-1056.

topへ戻る

2008
"High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP superlattice layers",
N. Yamamoto, Y. Nakanishi, A. Mano, Y. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X. G. Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara,
J. Appl. Phys., 103, (2008), #064905.

"Super-high brightness spin-polarized transmission photocathode based on GaAs-GaAsP strained superlattice structure on GaP substrate",
X.G. Jin, N. Yamamoto,Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi, T. Saka, H. Horinaka, T. Yasue, and T. Koshikawa,
Appl. Phys. Express 1, (2008), #045002.

"Solution growth of high-quality 3C-SiC crystals",
T. Ujihara, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, and Y. Takeda,
J. Cryst. Growth, 310, (2008), pp. 1438-1442.

"Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxy",
S. Fuchi, S. Miyake, S. Kawamura, W.S. Lee, T. Ujihara, Y. Takeda,
J. Cryst. Growth, 310, (2008), pp. 2239-2243.

"Highly spin-polarized electron photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer",
X.G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, and T. Koshikawa,
J. Cryst. Growth, 310, (2008), pp. 5039-5043.

"Minority Carrier Lifetime in Polycrystalline Silicon Solar Cells Studied by Phot-assisted Kelvin Probe Force Microscopy",
M. Takihara, T. Ujihara, T. Takahashi,
Appl. Phys. Lett., 93, (2008), 021902.

"Local concentration of gel phase domains in supported lipid bilayers under light irradiation in binary mixture of phospholipids doped with dyes for photoinduced activation",
T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero, Y. Takeda,
Langmuir, 24, (2008), pp. 10974-10980.

"Lipid Bilayer Membrane with Atomic Step Structure:Supported Bilayer on Step-and-Terrace TiO2(100) Surface",
R. Tero, T. Ujihara, T. Urisu,
Langmuir, 24, (2008), pp. 11567-11576.

“歪み超格子スピン偏極電子源構造におけるバッファ層歪み緩和過程と偏極度の関係”,
前多悠也, 金秀光, 谷奥雅俊, 渕真悟, 宇治原徹, 竹田美和, 山本尚人,中川靖英, 山本将博, 奥見正治, 中西彊, 坂貴, 堀中博道, 加藤俊宏, 安江常夫, 越川孝範,
電子情報通信学会技術研究報告. CPM, 電子部品・材料, 108, (2008), pp. 75-84.

“固体表面物性がサポーティッドメンブレンの形成過程と構造に及ぼす影響”,
手老龍吾, 宇治原徹, 宇理須恒雄,
表面 HYOMEN(SURFACE), 46, (2008), pp. 287-299.

topへ戻る

2007
"Effect of Li doping on photoluminescence from Er, O-codoped GaAs",
D. Uki, H. Ohnishi, T. Yamaguchi, Y. Takemori, A. Koizumi, S. Fuchi, T. Ujihara and Y. Takeda,
J. Cryst. Growth, 298, (2007), pp. 69-72.

"Thermal emittance measurements for electron beams produced from bulk and superlattice negative electron affinity photocathods",
N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Sakai, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T. Nakanishi, M. Kuriki, C. Bo, T. Ujihara and Y. Takeda,
J. Appl. Phys., 102, (2007), # 024904.

"Photovoltage mapping on polycrystalline silicon solar cells by Kelvin probe force microscopy with piezoresistive cantilever",
M. Takihara, T. Igarashi, T. Ujihara and T. Takahashi,
Jpn. J. Appl. Phys. Part 1, 46, (2007), pp. 5548-5551.

“歪み補償型GaAs/GaAsP超格子偏極電子源の特性向上”,
加藤鷹紀, 酒井良介, 谷奥雅俊, 中川靖英, 前田義紀, 金秀光, 渕真悟, 山本将博, 宇治原徹, 中西 彊, 竹田美和,
電子情報通信学会技術研究報告. CPM, 電子部品・材料, 107, (2007), pp. 109-114.

“Er,O共添加GaAsを有する分離閉じ込め構造による1.5μm帯の電流注入による発光強度の増大”,
宇木大輔, 山口岳宏, 田中雄太, 渕真悟, 宇治原徹, 竹田美和,
電子情報通信学会技術研究報告. CPM, 電子部品・材料, 107, (2007), pp. 29-34.

“生体膜における相分離構造に関する研究”,
宇治原徹,
まてりあ, 46, (2007), pp. 433.

●プロシーディングス
"Supported lipid bilayer membranes on SiO2 and TiO2: substrate effects on membrane formation and shape transformation",
R. Tero, T. Ujihara, and T. Urisu,
Proceedings of SPIE, 6769, (2007), pp. 1-12.

topへ戻る

2006
"Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy",
T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda,
J. Cryst. Growth, 289, (2006), pp. 89-95.

"Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by AFM with Piezo-resistive Cantilever",
T. Igarashi, T. Ujihara, T. Takahashi,
Jpn. J. Appl. Phys. Part 1, 45, (2006), pp. 2128-2131.

"Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique",
K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, and K. Nakajima,
Mater. Sci. Forum, 527-529, (2006), pp. 119-122.

"Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution",
Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara and Kazuo Nakajima,
Mater. Sci. Forum, 527-529, (2006), pp. 115-118.

"Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method",
T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda,
Appl. Phys. Lett., 89, (2006), # 083110.

“分散量子ドット構造を利用した広帯域発光素子”,
李祐植, 三宅信輔, 渕真悟, 宇治原徹, 竹田美和,
日本結晶成長学会誌, 33, (2006), pp. 106-110.

“GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化”,
宇治原徹, 陳　博,　安井健一, 酒井良介, 山本将博, 中西　彊, 竹田美和,
信学技報, 106, (2006), pp. 79-84.

●プロシーディングス
"The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution",
S. Miyake, W. S. Lee, T. Ujihara and Y. Takeda,
The 18th Indium Phosphide and Related Materials Conference (IPRM06), Princeton University, Princeton, NJ, USA, 7-11 May (2006), pp. 208-210.

"Evaluation of Strain Field around SiC Particle in Poly-Crystalline Silicon",
T. Ujihara, T. Ichitsubo, N. Usami, K. Nakajima, Y. Takeda,
2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC4), Waikoloa , Hawaii, USA, 7-12 May (2006) # 272.

topへ戻る

2005
"Crystal quality of a 6H-SiC layer grown over macro-defects by liquid phase epitaxy: a Raman spectroscopic study",
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima,
Thin Solid Films, 476, (2005), pp. 206-209.

"A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal",
Y. Azuma, N, Usami, K, Fujiwara, T, Ujihara and K, Nakajima,
J. Cryst. Growth, 276, (2005), pp. 393-400.

"Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution",
K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihar, K. Nakajima,
Mater. Sci. Forum, 483, (2005), pp. 13-16.

"Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate",
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima,
J. Cryst. Growth, 273, (2005), pp. 594-602.

"Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams",
K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki,
International Journal of Material & Product Technology, 22, (2005), pp. 185-212.

"Structural properties of directionally grown polycrystalline SiGe for solar cells",
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima,
J. Cryst. Growth, 275, (2005), pp. 467-473.

"Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent",
Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima, and T. Ujihara,
J. Appl. Phys., 98, (2005), 073708.

"Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer",
U. Noritaka, K. Kutsukake, W. Pan, K. Fujiwara, T. Ujihara, B. Zhang, T. Yokoyama, K. Nakajima,
J. Cryst. Growth, 275, (2005), pp. 1203-1207.

“メサ構造ＩｎＰテンプレート基板へのＩｎＡｓ量子ドットの成長とサイズ制御”,
宇治原 徹, 吉田義浩, 李祐植, 竹田美和,
信学技報 105, (2005), pp. 23-26.

“太陽電池用Si系バルク多結晶の結晶成長及び太陽電池特性　―多結晶Siの融液成長のその場観察とバルク多結晶SiGeの特性評価―”,
藤原航三, 宇佐美徳隆, 藩伍根, 宇治原徹, 野村明子, 野瀬嘉太郎, 宍戸統悦, 中嶋一雄,
日本結晶成長学会誌, 32, (2005), pp. 291-296.

●プロシーディングス
"Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE",
T. Ujihara, Y. Yoshida, W. S. Lee, R. Oga, Y. Takeda,
The 17th Indium Phosphide and Related Materials Conference (IPRM05), Glasgow, Scotland, UK, 8-12 May (2005), p112.

"Electrical Properties around Grain Boundary of Poly-Crystalline Silicon for Solar Cell Evaluated Using the Conductive AFM",
T. Ujihara, K. Nakajima, Y. Takeda,
15th PVSEC, Shanghai, China, 11-15 October (2005), pp. 118-119.

topへ戻る

2004
"Grain growth behaviors of polycrystalline silicon during melt growth processes",
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima,
J. Cryst. Growth, 266, (2004), pp. 441-448.

"Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate grown by liquid phase epitaxy",
T. Ujihara, E. Kanda, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima,
J. Cryst. Growth, 266, (2004), pp. 467-474.

"Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate",
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa,
Appl. Surf. Sci. 224, (2004), pp. 604-607.

"Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations",
K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki, and T. Shishido,
J. Cryst. Growth, 260, (2004), pp. 372-383.

"In-situ observations of melt growth behavior of polycrystalline silicon",
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima,
J. Cryst. Growth, 262, (2004), pp. 124-129.

"Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime",
N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima,
Thin Solid Films 451-452, (2004), pp. 604-607.

"Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate",
G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima,
J. Cryst. Growth, 262, (2004), pp. 196-201.

"In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy",
G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima,
J. Cryst. Growth, 262, (2004), pp. 536-542.

"Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer",
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki,
Appl. Phys. Lett. 84, (2004), pp. 2802-2804.

"Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution",
W. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima, R. Shimokawa,
J. Appl. Phys. 96, (2004), pp. 1238-1241.

"Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation",
Y. Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara, T. Ujihara,
Jpn. J. Appl. Phys. 46-2, (2004), L907.

"Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy",
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki, and K. Nakajima,
Mater. Sci. Forum, 457-460, (2004), pp. 633-637.

"Solution growth of self standing 6H-SiC single crystal using metal solvent",
K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima,
Mater. Sci. Forum, 457-460, pp. 123-126.

"TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent",
K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima,
Mater. Sci. Forum, 457-460, (2004), pp. 347-351.

"Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe",
N. Usami, WG. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K.Nakajima,
Jpn. J. Appl. Phys. 43, (2004), L250-L252.

"On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates",
K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, and K. Nakajima,
Appl. Phys. Lett. 85, (2004), pp. 1335-1337.

"Molten metal flux growth and properties of CrSi2",
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima,
J. Alloy Comp. 383, (2004), pp. 319-321.

"材料工学からの太陽電池研究",
宇治原徹,
まてりあ, 43, (2004), pp. 949-953.

"SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶",
中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦,
日本結晶成長学会誌, 31, (2004), pp.29-37.

●プロシーディングス
"Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method",
T. Ujihara, Y. Satoh, K. Obara, K. Fujiwara, G. Sazaki, N. Usami, T. Shishido and K. Nakajima,
14th PVSEC, 26-30 January (2004) Chulalongkorn University, Bangkok, Thailand.

topへ戻る

2003
"High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature",
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima,
Jpn. J. Appl. Phys., 42, (2003), L217-L219.

"Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature",
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima,
J. Cryst. Growth, 250, (2003), pp. 298-304.

"Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate",
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa,
Jpn. J. Appl. Phys., 42, (2003), L232-L234.

"Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals",
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima,
J. Cryst. Growth, 254, (2003), pp. 188-195.

"Enhanced quantum efficiency of solar cells with self-assembled Ge dots in multilayer structure",
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima,
Appl. Phys. Lett., 83, (2003), pp. 1258-1260.

"Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix",
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima,
J. Appl. Phys., 94, (2003), pp. 916-920.

"Stacked Ge islands for photovoltaic applications",
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki,
Sci. Tech. Adv. Mat., 4, (2003), pp. 367-370.

"Hightemperature solution growth and characterization of chromium disilicide",
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima,
Jpn. J. Appl. Phys. 42, (2003), pp. 7292-7293.

●プロシーディングス
"What is the most important growth parameter on crystal quality of the silicon layer by LPE method?",
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima,
Proc. 3rd World Conference on Photovoltaic Energy Conversion Joint Conference of 13th International PV Science & Engineering Conference30th IEEE PV Specialists Conference 18th European PV Solar Energy Conference, Osaka, Japan (2003), vol.2, pp. 1241-1244, 4PC325.

"Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution",
K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima,
Proc. 3rd World Conference on Photovoltaic Energy Conversion Joint Conference of 13th International PV Science & Engineering Conference30th IEEE PV Specialists Conference 18th European PV Solar Energy Conference, Osaka, Japan (2003), vol.1, pp. 158-160, 1PC311.

"Direct observations of crystal growth from silicon melt",
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima,
Proc. 3rd World Conference on Photovoltaic Energy Conversion Joint Conference of 13th International PV Science & Engineering Conference30th IEEE PV Specialists Conference 18th European PV Solar Energy Conference, Osaka, Japan (2003), vol.1, pp. 110-113, 1PC311.

"Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell applications",
N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima,
Proc. 3rd World Conference on Photovoltaic Energy Conversion Joint Conference of 13th International PV Science & Engineering Conference30th IEEE PV Specialists Conference 18th European PV Solar Energy Conference, Osaka, Japan (2003), vol.1, pp. 98-101, 1PC308.

"Improved quantum efficiency of solar cells with ge dots stacked in multilayer structure",
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, K. Sawano*, G. Sazaki, Y. Shiraki* and K. Nakajima,
Proc. 3rd World Conference on Photovoltaic Energy Conversion Joint Conference of 13th International PV Science & Engineering Conference30th IEEE PV Specialists Conference 18th European PV Solar Energy Conference, Osaka, Japan (2003), vol.3, pp. 2746-2749, S1LND02.

topへ戻る

2002
"New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick’s first law",
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima,
J. Cryst. Growth, 241, (2002), pp. 387-394.

"Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions",
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima,
J. Cryst. Growth, 242, (2002), pp. 313-320.

"In-situ observation of the Marangoni convection of a NaCl aqueous solutions under microgravity",
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, N. Usami, and K. Nakajima,
J. Cryst. Growth, 234, (2002), pp. 516-522.

"Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications",
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido,
Sol. Energy Mater. Sol. Cells, 72, (2002), pp. 93-100.

"Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution",
N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima, and H. Yaguchi,
Jpn. J. Appl. Phys., 41, (2002), L37-L39.

"In-situ monitoring system of the position and temperature at the crystal-solution interface",
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima,
J. Cryst. Growth, 236, (2002), pp. 125-131.

"Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures",
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima,
Mat. Sci. Eng., B89, (2002), pp. 364-367.

"Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution",
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima,
Jpn. J. Appl. Phys., 41, (2002), pp. 4462-4465.

"Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells",
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido,
Sol. Energy Mater. Sol. Cells, 73, (2002), pp. 305-320.

"Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals",
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido,
J. Cryst. Growth, 240, (2002), pp. 373-381.

"In situ observation of crystal growth behavior from silicon melt",
K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima,
J. Cryst. Growth, 243, (2002), pp. 275-282.

"Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick’s first law",
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima,
J. Non-Cryst. Solids, 312-314, (2002), pp. 196-202.

"Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution",
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima,
J. Appl. Phys., 92, (2002), pp. 7098-7201.

"均一組成SiGeバルク結晶成長と関連する測定技術",
宇治原徹, 我妻幸長, 宇佐美徳隆, 佐崎 元, 藤原航三, 宍戸統悦, 中嶋一雄,
日本結晶成長学会誌, 29, (2002), pp.399.

●プロシーディングス
"Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties",
T. Ujihara, E. Kanda, K. Fujiwara, G. Sazaki, N. Usami, Y. Murakami, K. Kitahara and K. Nakajima,
Proc. Int. Conf. on 29th IEEE Photovoltaic Specialists Conference, (2002), pp. 1339-1342.

"Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency",
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima,
Proc. Int. Conf. on 29th IEEE Photovoltaic Specialists Conference, (2002), pp. 247-249.

"Effect of growth temperature on surface morphology and crystal quality of Si thin-film by liquid phase epitaxial growth technique",
T. Ujihara, E. Kanda, K. Fujiwara, N. Usami, G. Sazaki, K. Nakajima,
Proc. PV in Europe from PV Technology to Energy Solutions Conference and Exhibition, Palazzo dei Congressi, Roma, Italy, 7-11 October (2002), pp. 408-411.

topへ戻る

2001
"Assessing composition gradient energy effects due to spin interaction on the spinodal decomposition of Fe-Cr",
T. Ujihara, K. Osamura,
Mater. Sci. Eng. A, 312, (2001), 128.

"Physical model for the evaluation of solid-liquid interfacial tension in silicon",
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, K. Nakajima,
J. Appl. Phys., 90, (2001), pp. 750-755.

"Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in-situ monitoring system",
Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara, and K. Nakajima,
J. Cryst. Growth, 224, (2001), pp. 204-211.

"Growth of SixGe1-x (x≒0.15) Bulk Crystal with Uniform Composition by Utilizing in situ Monitoring of the Crystal-Solution Interface",
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami, and K.Nakajima,
Jpn. J. Appl. Phys., 44, (2001), pp. 4141-4144.

"Effects of misfit dislocation and AlN buffer layer on the GaInN/GaN phase diagram of the growth modes",
K. Nakajima, T. Ujihara, and G. Sazaki,
J. Appl. Phys., 89, (2001), pp. 146-153.

"Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method",
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K.Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa, and S. Kodama,
Semicon. Sci. and Technol., 16, (2001), pp. 699-703.

topへ戻る

2000
"Kinetic analysis of spinodal decomposition process in Fe-Cr alloys by small angle neutron scattering",
T. Ujihara, K. Osamura,
Acta Materialia, 48, (2000), pp. 1629-1637.

"Thickness dependence of stable structure of the Stranski-Krastanov mode in the GaPSb/GaP system",
K. Nakajima, T. Ujihara, S. Miyashita, G. Sazaki,
J. Cryst. Growth, 209, (2000), pp. 637-647.

"In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry",
T. Ujihara, G. Sazaki, S. Miyashita, N. Usami, K. Nakajima,
Jpn J. Appl. Phys, 39, (2000), pp. 5981-5982.

"SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications",
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, Y. Yakabe, T. Kondo, S. Koh, B. Zhang, Y. Segawa,Y. Shiraki, S. Kodama, and K. Nakajima,
Appl. Phys. Lett., 77, (2000), pp. 3565-3567.

"Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies",
K. Nakajima, T. Ujihara, G. Sazaki, and N. Usami,
J. Cryst. Growth, 220, (2000), pp. 413-424.

●プロシーディングス
"Effects of the dislocation density and surface energy on phase diagrams of the S-K mode for the GaInN/GaN and GaPSb/GaP systems",
K. Nakajima, T. Ujihara, S. Miyashita, and G. Sazaki,
Materials Research Society 2000 Spring Meeting, San Francisco, In Mat. Res. Soc. Symp. Proc., Vol. 618, (2000), pp.285-290.

topへ戻る

1999〜
"Magnetic damping of the temperature-driven convection in NaCl aqueous solution using a static and homogeneous field of 10 T",
G. Sazaki, S. D. Drubin, S. Miyashita, T. Ujihara, K. Nakajima, M. Motokawa,
Jpn. J. Appl. Phys., 38, (1999), L842-844.

"Phase diagrams and stable structures of Stranski-Krastanov structure mode for III-V ternary quantum dots",
K. Nakajima, T. Ujihara, S. Miyashita and G. Sazaki,
J. Korean Association of Crystal Growth, 9, (1999), pp. 387-395.

"The excess free energy due to composition gradient for ferromagnetic alloys",
T. Ujihara, K. Osamura,
Acta Materialia, 47, No. 10, (1999), pp. 3041-3048.

"Effect of nonlinearity of the evolution equation on the spinodal decomposition process in alloys",
T. Ujihara, K. Osamura,
Physical Review, B58, No.17, (1998), pp. 11371-11376.

"Effect of Third Elements on Cu Precipitation in Fe-Cu Alloys",
K. Osamura, T. Yamamoto, T. Ujihara, H. Okuda, M. Furusaka,
Ann. Physiq. C3, 20, (1995), 3.

“Al-Zn合金における相分解初期過程でのGPゾーンの形状異方性”,
宇治原 徹, 長村光造, 雨宮慶幸,
日本金属学会誌, 1998年2月, 第62巻 第2号, 117.

●プロシーディングス
"Kinetics of Spinodal Decomposition with Composition Dependent Mobility",
T. Ujihara, K. Osamura,
Proceeding of the International Conference on Solid-Solid Phase Transformation '99, (1999), pp. 117-120.

"Phase Decomposition in Fe-Cr-Mo Alloy",
K. Osamura T. Ujihara, H. Okuda, M. Furusaka,
Proc. Int. Conf. On PTM’94 Solid-Solid Phase Transformation in Inorganic Materials, (1994), 377.